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HiPerFETTM Power MOSFETs
Single MOSFET Die
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C (MOSFET chip capability) External lead (current limit) TC = 25C, Note 1 TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS TJ 150C, RG = 2 W TC = 25C
IXFK 150N15 IXFX 150N15
VDSS ID25
RDS(on)
= 150 V = 150 A = 12.5 mW
trr 250 ns
Maximum Ratings 150 150 20 30 150 76 600 150 60 3 5 560 -55 ... +150 150 -55 ... +150 300 0.9/6 V V V V A A A A mJ J V/ns W C C C C Nm/lb.in. 6 10 g g
PLUS 247TM (IXFX)
G
D (TAB) D
TO-264 AA (IXFK)
G D S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
Features * International standard packages * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance - easy to drive and to protect * Fast intrinsic rectifier
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 150 2.0 V 4.0 V 100 nA TJ = 25C TJ = 125C 100 mA 2 mA 12.5 mW
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Note 1
Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control * Temperature and lighting controls
Advantages * PLUS 247TM package for clip or spring mounting * Space savings * High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
98654 (9/99)
(c) 2000 IXYS All rights reserved
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IXFK 150N15 IXFX 150N15
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 2 50 75 9100 VGS = 0 V, VDS = 25 V, f = 1 MHz 2600 1200 50 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 W (External), 60 110 45 360 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 65 190 0.22 0.15 S pF pF pF ns ns ns ns
Dim. Millimeter Min. Max. A 4.83 5.21 2.29 2.54 A1 A2 1.91 2.16 b 1.14 1.40 b1 1.91 2.13 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190
PLUS247TM (IXFX) Outline)
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 60A
nC nC nC K/W K/W
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = 100A, VGS = 0 V, Note 1
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 150 600 1.5 250 A A V ns mC A
TO-264 AA Outline
IF = 50A,-di/dt = 100 A/ms, VR = 50 V
1.1 13
Note: 1. Pulse width limited by TJM 2. Pulse test, t 300 ms, duty cycle d 2 %
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83
Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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